Yongjin Jiang, Tony Low, et al.
Physical Review Letters
In this paper, we clarify the physical mechanism for the phenomenon of negative output differential resistance (NDR) in short-channel graphene FETs through nonequilibrium Green's function simulations and a simpler semianalytical ballistic model that captures the essential physics. This NDR phenomenon is due to a transport mode bottleneck effect induced by the graphene Dirac point in the different device regions, including the contacts. NDR is found to occur only when the gate biasing produces an n-p-n or p-n-p polarity configuration along the channel, for both positive and negative drain-source voltage sweep. In addition, we also explore the impact on the NDR effect of contact-induced energy broadening in the source and drain regions and a finite contact resistance. © 1963-2012 IEEE.
Yongjin Jiang, Tony Low, et al.
Physical Review Letters
Tony Low, Rafael Roldán, et al.
Physical Review Letters
Tony Low, A. Chaves, et al.
Nature Materials
Tony Low, Francisco Guinea, et al.
Physical Review B - CMMP