S. Cohen, J.C. Liu, et al.
MRS Spring Meeting 1999
In this Letter, we present a simulation study of the electrical characteristics of ultimately scaled carbon nanotube field-effect transistors. Devices with Schottky contacts and doped source/drain contacts are compared. We show that for small bias devices with doped source/drain contacts exhibit a better on- as well as off-state compared to devices with Schottky contacts. Both device types, however, show a poor off-state for larger bias. We will discuss the relevant transport mechanisms involved and explain our observations. © 2004 Elsevier Ltd. All rights reserved.
S. Cohen, J.C. Liu, et al.
MRS Spring Meeting 1999
F. Rodriguez-Morales, R. Zannoni, et al.
Applied Physics Letters
B.A. Hutchins, T.N. Rhodin, et al.
Surface Science
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000