I.K. Pour, D.J. Krajnovich, et al.
SPIE Optical Materials for High Average Power Lasers 1992
The basis for resonant photoemission is discussed in connection with data for a physisorption system, Ar/Pt(111) and a 3d transition metal, Ni(100). For Ar/Pt(111) the quasi-localized character of the intermediate state leads to two types of features in the autoionization spectra, showing resonant Raman and normal Auger-like behaviour, respectively. For Ni(100) resonant Raman behaviour is observed in photoemission below the L3, threshold. At threshold, the emission feature changes character and after a rather narrow transition region it appears at constant emission energy instead. Clear signatures of interference between the direct photoemission and autoionization channels are identified. © Springer-Verlag 1997.
I.K. Pour, D.J. Krajnovich, et al.
SPIE Optical Materials for High Average Power Lasers 1992
Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
P. Martensson, R.M. Feenstra
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
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IEEE T-MTT