Bent Nielsen, K.G. Lynn, et al.
Physical Review B
Growth of rough polycrystalline silicon films has been achieved on SiO 2 surfaces over a broad temperature range (≥100°C) using SiH4 chemical vapor deposition at low pressures (mTorr range), with smaller grain structure and roughness length scale achieved at lower temperatures. Rough morphology over a broad temperature range is attributed to the combination of nucleation-controlled initial growth (on SiO2) and domination of growth by surface reaction (cf. gas phase).
Bent Nielsen, K.G. Lynn, et al.
Physical Review B
M. Liehr, S. Gates, et al.
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
M. Liehr, S.S. Dana, et al.
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
R.J. Purtell, P.S. Ho, et al.
Physica B+C