Charging effects on the carrier mobility in silicon-on-insulator wafers covered with a high-k layer

The MOSFET configuration was applied to silicon-on-insulator (SOI) wafers to measure the electron mobility at silicon interfaces. The SOI wafers were covered with different types of oxide thin films. A correlation was noticed between electron mobility and the density of interface traps at the silicon interface. There was an increase in the mobility due to the reduction of the interface traps by a forming gas anneal.