Sang-Min Park, Mark P. Stoykovich, et al.
Advanced Materials
Ion-excited Auger electron emission from silicon has been investigated for 2 to 30 keV noble gas ion bombardment. It was found that Si L shell excitation is mostly due to symmetric SiSi collisions. The Auger spectrum is characterized by several relatively narrow (but Doppler broadened) L2, 3MN lines originating from sputtered atoms and a broad bulk-like L2, 3VV line. Comparison between the L2, 3VV line and the electron-excited L2, 3VV line indicates that the density and/or the population of states in a collision cascade is markedly different from the unperturbed case. © 1979.
Sang-Min Park, Mark P. Stoykovich, et al.
Advanced Materials
T.N. Morgan
Semiconductor Science and Technology
R. Ghez, M.B. Small
JES
Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures