D.J. DiMaria
Journal of Applied Physics
Sodium ions in the SiO2 layer of MOS structures have been completely neutralized at liquid-nitrogen temperatures (77 °K) by avalanche injection of electrons from the Si substrate. Three principal electron capture cross sections (2×10-15, 2×10-19, and 5×10-20 cm2) associated with ionic sodium (Na +) contamination have been observed.
D.J. DiMaria
Journal of Applied Physics
J.M. Aitken
Journal of Electronic Materials
J.H. Stathis, A. Vayshenker, et al.
VLSI Technology 2000
P.C. Arnett, D.J. DiMaria
Applied Physics Letters