D.J. DiMaria, D.R. Young, et al.
Journal of Applied Physics
The few mono-layers limit of oxide thickness is experimentally investigated for the magnitude of tunneling current and the limitations to MOSFETS are described due to gate leakage arising from accumulation currents. A gate-current spectroscopy technique is described to obtain the channel potential in the long and short-channel limit, and additional supporting evidence provided for the anode-to-cathode conducting path for breakdown.
D.J. DiMaria, D.R. Young, et al.
Journal of Applied Physics
D.J. DiMaria, Z.A. Weinberg, et al.
Journal of Applied Physics
W.I. Wang, S. Tiwari
IEEE T-ED
S. Tiwari, F. Rana, et al.
IEDM 1995