Capture cross section and trap concentration of holes in silicon dioxide

Abstract

Hole trapping in thermally grown silicon-dioxide films has been studied using optically induced hot-hole injection in p-channel polysilicon-SiO 2-silicon field-effect-transistor structures. Analysis of the data assuming a uniform trap distribution and no detrapping gives 3.1×10 -13 cm2 and 1.4×1018 cm-3 for the capture cross section and the trap concentration, respectively. Initial hole-trapping efficiency is almost 99% for a 1000-Å SiO2 film.