Aspects of defects in silica related to dielectric breakdown of gate oxides in MOSFETs

Abstract

Defects in silica related to hydrogen and oxygen vacancies have been analyzed using first principles density functional calculations. The hydrogen bridge has been identified as the defect responsible for the stress-induced leakage current, a forerunner of dielectric breakdown. The question of Joule heating of the oxide as a result of dielectric breakdown is discussed. A classification scheme for defects in the short-range structure of silica is presented.