D.J. Frank, S.E. Laux, et al.
IEEE Transactions on Electron Devices
Paper
Arbitrary crystallographic orientation in QDAME with Ge 7.5 nm DGFET examples
Abstract
The two-dimensional device simulation program QDAME has been extended to permit arbitrary crystallographic orientation. A ballistic formulation of quantum transport utilizing parabolic, ellipsoidal conduction bands is adopted and solved self-consistently with the Poisson equation. Results for Ge DGFETs with 7.5 nm channel length are used to demonstrate the approach. © Springer Science + Business Media, Inc. 2004.
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