Publication
SPIE Advances in Resist Technology and Processing 1999
Paper

Approaches to etch resistant 193-nm photoresists: Performance and prospects

Abstract

We have investigated three substantially different routes to 193 nm single layer resists. This paper will attempt to shed light on the strengths and weaknesses of each approach (acrylic, maleic anhydride alternating copolymers and cyclic olefin addition polymers). Design principles, polymer synthesis and properties, and resist properties (lithographic and etch performance) will be discussed for the three main branches of 193 nm resists.