H.D. Dulman, R.H. Pantell, et al.
Physical Review B
Selective protection of the porosity can be implemented in porous materials processing by using an organic polymer fill. This strategy is employed to protect ultralow-k (ULK) materials during patterning of 250-nm lines and spaces. Structures with significantly less sidewall and trench bottom damage are obtained, proving the potential of this novel approach in materials science. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
H.D. Dulman, R.H. Pantell, et al.
Physical Review B
R.D. Murphy, R.O. Watts
Journal of Low Temperature Physics
Dipanjan Gope, Albert E. Ruehli, et al.
IEEE T-MTT
D.D. Awschalom, J.-M. Halbout
Journal of Magnetism and Magnetic Materials