Anomalous diffusion of boron implanted into silicon along the [100] direction

Abstract

We have observed transient enhanced diffusion of boron implanted into silicon along the [100] channeling direction and compared it with that of boron implanted in a "random" direction. It is found that the anomalous boron displacement for the channeled implants is significantly greater than for the random counterparts. An empirical explanation for the greater displacement of the channeled implants is proposed that is related to the spatial distribution of the implanted boron and the lattice damage generated by the implantation process.