K.L. Saenger, C. Cabral Jr., et al.
Journal of Applied Physics
Annealing behavior of Cu and dilute Cu-alloy films was analyzed. Annealing at 400 °C for 5 h or 650 or 950 °C for 0 h led to a reduction in resistivity as a result of grain growth and alloy decomposition by precipitation and/or surface segregation. The higher the annealing temperature, the lower the resistivity.
K.L. Saenger, C. Cabral Jr., et al.
Journal of Applied Physics
Q.Z. Hong, K. Barmak, et al.
MRS Proceedings 1992
Y.-H. Kim, C. Cabral Jr., et al.
VLSI-TSA 2006
E.T. Yu, K. Barmak, et al.
Journal of Applied Physics