S.-L. Zhang, F.M. D'Heurle, et al.
Applied Physics Letters
Annealing behavior of Cu and dilute Cu-alloy films was analyzed. Annealing at 400 °C for 5 h or 650 or 950 °C for 0 h led to a reduction in resistivity as a result of grain growth and alloy decomposition by precipitation and/or surface segregation. The higher the annealing temperature, the lower the resistivity.
S.-L. Zhang, F.M. D'Heurle, et al.
Applied Physics Letters
L. Clevenger, Q.Z. Hong, et al.
MRS Proceedings 1993
L. Clevenger, N.A. Bojarczuk, et al.
Journal of Applied Physics
Q.Z. Hong, K. Barmak, et al.
Applied Physics Letters