Christophe R. Tretz, C.T. Chuang, et al.
International Journal of Electronics
Paper
An Investigation of the Potential of MOS Transistor Memories
Abstract
The design and performance characteristics of a 128X64 MOS transistor memory is given. The storage cell used operates with a low standby power, 0.1 mW. The memory operates with a 12-ns access time, 35-ns read cycle time, and a 60-ns write cycle time. Copyright © 1966 by The Institute of Electrical and Electronics Engineers, Inc.
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