C. Detavernier, C. Lavoie, et al.
Journal of Applied Physics
A novel diffusion "marker" has been used in the backscattering study of the formation of Mo and W silicide films. Because of their closely similar crystallographic and chemical characteristics, Mo and W may be regarded as equivalent atoms in a diffusion process. Hence, in the formation of WSi 2 and MoSi2 by interaction of a bilayer film of W+Mo with substrate Si, the interface between the W and Mo (observable by backscattering) becomes a "marker" to permit identification of the moving species (Si at T<1000°C).
C. Detavernier, C. Lavoie, et al.
Journal of Applied Physics
J.E.E. Baglin, J.C. Davis, et al.
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
C. Cabral Jr., L. Clevenger, et al.
Applied Physics Letters
J.E.E. Baglin, H.A. Atwater, et al.
Thin Solid Films