Air-stable chemical doping of carbon nanotube transistors

Abstract

Air-stable chemical p-doping of Carbon Nanotubes (CN) field effect transistors (CNFET) via charge transfer is demonstrated. The method for suppressing minority carrier injection and excellent DIBL-like behavior was also studied. It is known that CNFET fabricated from as-grown CN on thick gate dielectric and under ambient conditions show p channel conduction due to oxygen interactions at the metal-CN interface. It was shown that the oxygen content at the metal-CN interface can be easily changed by standard fabrication processes.