A new class of low bake resists for 193-nm immersion lithography
Ratnam Sooriyakumaran, Richard DiPietro, et al.
SPIE Advanced Lithography 2008
A series of de-protected polymers with pre-determined levels of de-protection were prepared in two types of high-resolution 248nm positive chemically amplified (CA) resists: conventional resists and silicon containing resists. The morphology and surface roughness of blend films of the protected and the de-protected polymers were monitored throughout the standard resist processing steps by using atomic force microscopy (AFM). Results suggest that resist line edge roughness stems in a large part from the phase incompatibility of the protected and the de-protected polymers in the line edge regions for positive CA resists.
Ratnam Sooriyakumaran, Richard DiPietro, et al.
SPIE Advanced Lithography 2008
Karen Petrillo, David Medeiros, et al.
SPIE Photomask Technology 2002
Brian Ashe, Christina Deverich, et al.
Proceedings of SPIE - The International Society for Optical Engineering
David R. Medeiros, Wayne M. Moreau, et al.
Proceedings of SPIE - The International Society for Optical Engineering