Conference paper
Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
The role of diffusion and convection in conventional flux growth is compared with the strong effect of the accelerated crucible rotation technique (ACRT). ACRT allows fast solution flux rates at the growing crystal faces. By this and by homogenization of the solution many problems in flux growth are solved. Control of nucleation in a closed crucible is achieved by combination of ACRT with localized coding. Large inclusion-free crystals with applications in solid state physics and technology have been grown. © 1972.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
P. Alnot, D.J. Auerbach, et al.
Surface Science
Ranulfo Allen, John Baglin, et al.
J. Photopolym. Sci. Tech.
David B. Mitzi
Journal of Materials Chemistry