D.E. Eastman, J.F. Janak, et al.
Journal of Applied Physics
An anisotropic direct-transition model for single-crystal semiconductors is shown to predict the direct-transition features seen in experimental photoemission spectra for Ge(111) for hν20 eV. By comparing theory with experiment, all the conduction and valence bands at L and X within 1 Ry of the gap are determined. Comparison of experiment with current band models suggests that an ∼ 10% self-energy correction may be needed to describe high-energy optical transitions. © 1974 The American Physical Society.
D.E. Eastman, J.F. Janak, et al.
Journal of Applied Physics
D.E. Eastman
Journal of Applied Physics
D.W. Jepsen, F.J. Himpsel, et al.
Physical Review B
W.D. Grobman, D.E. Eastman, et al.
Physics Letters A