A relationship between photoemission-determined valence band gaps in semiconductors and insulators and ionicity parameters

W.D. Grobman; D.E. Eastman; M.L. Cohen

doi:10.1016/0375-9601(73)90539-2

Physics Letters A

Paper

12 Feb 1973

A relationship between photoemission-determined valence band gaps in semiconductors and insulators and ionicity parameters

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Abstract

The energy gap between the lowest two valence bands for several binary compounds has been determined from photoemission distributions and is found to be a good measure of the ionicity parameter C of the Philips-Van Vechten theory. © 1973.

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Abstract

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Photoemission Measurements of Filled and Empty Surface States on Semiconductors and Their Relation to Schottky Barriers

Structure-dependent surface core level shifts for the Au(111), (100), and (110) surfaces

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