A WDM-Compatible 4 × 32-Gb/s CMOS-driven electro-absorption modulator array

Abstract

A four-channel electro-absorption-modulator array, driven by 32-nm CMOS drivers providing 2-V peak-to-peak output swing, operates with BER < 10-12 at a data rate of 4 × 32 Gb/s and dissipates 170 mW of power.