William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010
A structural and mechanistic model for initial room temperature Fe epitaxy on Cu(100) is presented, based on scanning tunneling microscopy data. Changes in Fe atom attachment kinetics with coverage θ yield several growth regimes: Fe incorporation into the surface by atomic exchange with Cu (θ < 0.2), growth of first-layer Fe islands (0.2 < θ < 0.7), and simultaneous layer-1 and layer-2 growth (0.7 < θ < 2). These results reconcile qualitative disparities in previous interpretations of experimental results. © 1994.
William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
Frank R. Libsch, Takatoshi Tsujimura
Active Matrix Liquid Crystal Displays Technology and Applications 1997
M. Hargrove, S.W. Crowder, et al.
IEDM 1998