A porous SiCOH dielectric with k=2.4 for high performance BEOL interconnects

Abstract

An advanced porous SiCOH (pSiCOH) dielectric with k = 2.4 and superior properties optimized for reliable integration is presented. This ULK pSiCOH is characterized by small pores, low pore connectivity, and high Si-CH3 concentration. Excellent electrical properties are measured in blanket films of advanced pSiCOH: low leakage current, high breakdown field, and stable k value after exposure to integration processing. The electrical performance of the advanced pSiCOH demonstrates that this new ULK dielectric will provide reliable BEOL interconnects with low RC product for CMOS generations at 45 nm and beyond. © 2007 Materials Research Society.