A New Luminescent Band Induced in NaF by Ion Implantation

Abstract

High concentrations of defects are induced in a thin surface layer of pure and doped NaF crystals by ion implantation with 280 keV H+, H+2, B+, and Ne+ ions. Laser induced luminescence in these crystals shows a new band peaking at 750 nm. It presents a high stability under thermal annealing and optical treatments. The experimental results point out that those centers responsible for this emission band are F2 disturbed centers which are only created under ion implantation. Copyright © 1987 WILEY‐VCH Verlag GmbH & Co. KGaA