A model for negative bias temperature instability (NBTI) in oxide and high κ pFETs

Abstract

A model for the negative bias temperature instability (NBTI) is proposed. Unlike previous empirical models, this model is derived from physics principles. The model attributes NBTI to de-passivation of SiO 2/Si interface and its two distinguishing features are: application of statistical mechanics to calculate de-passivated site density increase and the assumption that the hydrogen diffusion is dispersive. The model is verified using new and published NBTI data for SiO 2/poly, SiON/W and HfO 2/W pFETs. A comparison between high k and conventional oxide is made.