Sufi Zafar, Cyril Cabral Jr., et al.
Applied Physics Letters
A model for the negative bias temperature instability (NBTI) is proposed. Unlike previous empirical models, this model is derived from physics principles. The model attributes NBTI to de-passivation of SiO 2/Si interface and its two distinguishing features are: application of statistical mechanics to calculate de-passivated site density increase and the assumption that the hydrogen diffusion is dispersive. The model is verified using new and published NBTI data for SiO 2/poly, SiON/W and HfO 2/W pFETs. A comparison between high k and conventional oxide is made.
Sufi Zafar, Cyril Cabral Jr., et al.
Applied Physics Letters
Miaomiao Wang, Sufi Zafar, et al.
Microelectronic Engineering
Yan Xiong, James Huang, et al.
ACS Nano
Sufi Zafar, A. Kerber, et al.
VLSI Technology 2014