Yan Xiong, James Huang, et al.
ACS Nano
A method for measuring metal barrier heights, work function and fixed charge densities in metal/SiO2/Si capacitors is developed and verified. This technique is based on theoretical studies of tunneling phenomenon through a potential barrier and requires measurement of current versus voltage sweeps at two different temperatures. Unlike the commonly used capacitance method, this method does not require a set of capacitors with different gate oxide thickness for determining work functions and fixed charge densities in metal/SiO2/Si capacitors. Hence, this method provides a fast means for investigating metal work function and fixed charge densities in metal-gated SiO2 capacitors. © 2002 American Institute of Physics.
Yan Xiong, James Huang, et al.
ACS Nano
Sufi Zafar, Minhua Lu, et al.
Scientific Reports
Sufi Zafar, A.C. Callegari, et al.
ECS Meeting 2005
J. Yuan, S.S. Tan, et al.
VLSI Technology 2006