Jakub Kedzierski, Diane Boyd, et al.
IEEE Transactions on Electron Devices
A method for measuring metal barrier heights, work function and fixed charge densities in metal/SiO2/Si capacitors is developed and verified. This technique is based on theoretical studies of tunneling phenomenon through a potential barrier and requires measurement of current versus voltage sweeps at two different temperatures. Unlike the commonly used capacitance method, this method does not require a set of capacitors with different gate oxide thickness for determining work functions and fixed charge densities in metal/SiO2/Si capacitors. Hence, this method provides a fast means for investigating metal work function and fixed charge densities in metal-gated SiO2 capacitors. © 2002 American Institute of Physics.
Jakub Kedzierski, Diane Boyd, et al.
IEEE Transactions on Electron Devices
Jakub Kedzierski, Diane Boyd, et al.
IEEE Transactions on Electron Devices
J.-P. Han, H. Utomo, et al.
IEDM 2006
Sufi Zafar, Christopher D'Emic, et al.
Nanotechnology