A high reliability Metal Insulator Metal capacitor for 0.18 μm Copper technology

Abstract

A high reliability Metal-Insulator-Metal capacitor integrated into a 0.18 μm CMOS foundry technology using Copper interconnects is discussed. Integration solutions specific to Copper processing are described and process yield and reliability results are presented on 0.72 fF/μm2 capacitors. Performance and reliability metrics are shown to be comparable to those formed on Aluminum technologies.