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LISS 2011
Conference paper

A high-density SRAM design technique using silicon nanowire FETs

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Abstract

A new all-single-wire 6T-SRAM technique using junctionless nanowire FETs is proposed. The quantization-free design shows a great advantage in Si-nanowire-based SRAM cells. TCAD-simulated results show that the proposed single-wire SRAM can improve Read stability, and it can save about one third of the area as compared with multi-wire design while it is compatible with conventional processing. © 2011 IEEE.

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LISS 2011

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