A high-density SRAM design technique using silicon nanowire FETs

Abstract

A new all-single-wire 6T-SRAM technique using junctionless nanowire FETs is proposed. The quantization-free design shows a great advantage in Si-nanowire-based SRAM cells. TCAD-simulated results show that the proposed single-wire SRAM can improve Read stability, and it can save about one third of the area as compared with multi-wire design while it is compatible with conventional processing. © 2011 IEEE.