Yuan Taur, Genda J. Hu, et al.
IEEE Journal of Solid-State Circuits
Fully scaled NMOS devices, circuits, and dynamic memory with 1/2-µm nominal minimum dimensions at each level have been fabricated using direct-write e-beam patterning. This high-density NMOS technology yields nominally loaded average gate delays of 650 ps/stage with a power dissipation of 38 µW. The characteristics of this technology are presented with specific emphasis placed on features of the design which are unique to submicrometer MOSFET's, including a study of nonscaling effects and their impact on the device and circuit design. Copyright © 1985 by The Institute of Electrical and Electronics Engineers, Inc.
Yuan Taur, Genda J. Hu, et al.
IEEE Journal of Solid-State Circuits
George A. Sai-Halasz, Matthew R. Wordeman, et al.
IEEE Electron Device Letters
Cai Jin, David J. Frank, et al.
VLSI-TSA 2007
Leland Chang, David M. Fried, et al.
VLSI Technology 2005