About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Publication
IEEE T-ED
Paper
Threshold Voltage Characteristics of Depletion-Mode MOSFET's
Abstract
This paper presents the results of a study of the characteristics of the depletion-mode MOSFET. In particular, it is shown that the threshold voltage of this device is a function of its mode of operation (linear or saturated) due to a change in dominant conduction mechanisms caused by the finite depth of donor impurities in the channel. The effect of these impurities on the short channel behavior of the devices also is examined. Copyright © 1981 by The Institute of Electrical and Electronics Engineers, Inc.