Spin Qubits in Silicon FinFET Devices
Andreas Fuhrer, M. Aldeghi, et al.
IEDM 2022
Fast feedback from cryogenic electrical characterization measurements is key for the development of scalable quantum computing technology. At room temperature, high-throughput device testing is accomplished with a probe-based solution, where electrical probes are repeatedly positioned onto devices for acquiring statistical data. In this work, we present a probe station that can be operated from room temperature down to below 2 K. Its small size makes it compatible with standard cryogenic measurement setups with a magnet. A large variety of electronic devices can be tested. Here, we demonstrate the performance of the prober by characterizing silicon fin field-effect transistors as a host for quantum dot spin qubits. Such a tool can massively accelerate the design-fabrication-measurement cycle and provide important feedback for process optimization toward building scalable quantum circuits.
Andreas Fuhrer, M. Aldeghi, et al.
IEDM 2022
Alberto Ferraris, Eunjung Cha, et al.
IEDM 2022
Samuele Piccinelli, Francesco Tacchino, et al.
QSim 2025
Shelly Garion, Naoki Kanazawa, et al.
PRResearch