A 230 GHz quadrupler with 2 dBm output power in 90 nm SiGe BiCMOS technology

Abstract

A 230 GHz ×4 frequency multiplier chain implemented in an advanced 90 nm SiGe BiCMOS technology (fT/fMAX = 300/350 GHz) is presented. The chain achieves a peak output power of 2 dBm and consists of D-Band balanced doubler, D-Band single-ended three stages common-emitter power amplifier which drives a Schottky-diode based H-Band doubler. It operates from 214 GHz to 245 GHz (3 dB power bandwidth) with 5 dBm input power at V-Band and consumes a total DC power of 200 mW. The D-Band PA is operated with 1.6 V supply and achieves output saturated power of 14 dBm, at 115 GHz and 14 dB small signal gain.