H-band SiGe frequency multiplier chain with 4 dBm output power

Abstract

An H-Band ×4 frequency multiplier chain implemented in an advanced 90 nm SiGe BiCMOS technology is presented. The chain achieves a peak output power of 4 dBm and consists of D-Band doubler followed by D-Band power amplifier which drives an H-Band doubler. It operates from 202 GHz to 247 GHz (3 dB power bandwidth) with 2 dBm input power at V-Band and consumes a total DC power of 250 mW. This paper also discusses the measured results of all standalone components, comprising the multiplier chain which was designed and fabricated for active imaging applications.