96 GHz static frequency divider in SiGe bipolar technology

Abstract

We report a static frequency divider designed in a 210 GHz fT, 0.13 μm SiGe bipolar technology. The circuit consumes about 44 mA per latch (140 mA total for the chip, with input-output stages) from a -5.5 V power supply and operates up to 96.6 GHz.