Young-Hye La, Ratnam Sooriyakumaran, et al.
Journal of Materials Chemistry
A review of recent efforts to develop photoresist materials and processes for 193 nm (ArF excimer laser) photolithography is reported. Three categories of resist processes are discussed: (1) conventional single layer, (2) bilayer and (3) surface‐imaged resist processes. To date, materials have been developed for each process which exhibit resolution to less than 0.25 μm with sensitivities of less than 50 mJ/cm2. Copyright © 1994 John Wiley & Sons, Ltd.
Young-Hye La, Ratnam Sooriyakumaran, et al.
Journal of Materials Chemistry
Arpan P. Mahorowala, Dario L. Goldfarb, et al.
Microlithography 2003
Roderick R. Kunz, Robert D. Allen
Microlithography 1994
Mark A. Hartney, Justin N. Chiang, et al.
Proceedings of SPIE 1989