1.0-V and 1.5-V operation of 4-GHz tuned amplifiers implemented in a 0.1-μm CMOS technology on bulk and SOI substrates

Abstract

4-GHz 1.5-V tuned amplifiers are implemented using a partially-scaled double-level-metal 0.1-μm CMOS process on bulk and SOI substrates. The bulk and SOI amplifiers have forward transducer gains (S21) of 14 and 11 dB at VDD=1.5 V. The bulk amplifier has Fmin's of 3.6 and 4.5 dB at 3 and 4 GHz, respectively, with a power consumption of about 28 mW. When the supply voltage is reduced to 1.0 V, Fmin is increased to 4.4 and 5.0 dB at 3.0 and 4.0 GHz, while the peak gain and power consumption are lowered to 9 dB and 12.7 mW, respectively, which are not significantly worse than those of 5.8-GHz silicon bipolar LNA's.