A DDR3/4 memory link TX supporting 24-40 ω, 0.8-1.6 V, 0.8-5.0 Gb/s with slew rate control and thin oxide output stages in 22-nm CMOS SOI
- Marcel Kossel
- Christian Menolfi
- et al.
- 2014
- ESSCIRC 2014
This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.