Physical modeling and design rules of analog Conductive Metal Oxide-HfO2ReRAM
- Donato Francesco Falcone
- Stephan Menzel
- et al.
- 2023
- IMW 2023
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A Comprehensive Study on the Pillar Size of OTS-PCM Memory with an Optimized Process and Scaling Trends Down to Sub-10 nm for SCM Applications
- W. Chien
- E. Lai
- et al.
- 2023
- IMW 2023
Physical modeling and design rules of analog Conductive Metal Oxide-HfO2 ReRAM
- Donato Francesco Falcone
- Stephan Menzel
- et al.
- 2023
- IMW 2023