The Use of Gas Monitors to Characterize a Low-Temperature Atmospheric-Pressure Epitaxial SystemPaul D. AgnelloThomas O. Sedgwick2019JES
Reactive ion Etching of Silicon and Silicon Dioxide in CF4 Plasmas Containing H2 or C2F4 AdditivesJ.P. Simko2019JES
The Effects of Pressure, Temperature, and Time on the Annealing of lonizing Radiation Induced Insulator Damage in N-channel IGFET'sA. ReismanC.J. Merz2019JES
Mechanisms of Electroless Metal Plating: I. Application of the Mixed Potential TheoryPerminder BindraJudith Tweedie2019JES
Removal of Fluorocarbon Residues on CF4/H2 Reactive-ion-Etched Silicon Surfaces Using a Hydrogen PlasmaJ. SimkoG.S. Oehrleinet al.2019JES
Epitaxial Growth of GaAs with (C2H5)2GaCl and AsH3 in a Hotwall ReactorT.F. KuechM.A. Tischleret al.2019JES