Transition to the quantum hall regime in InAs nanowire cross-junctions
- Johannes Gooth
- Mattias Borg
- et al.
- 2019
- Semiconductor Science and Technology
Publications
Date
Featured collections
Popular topics
160 results for Heike Riel
Facet-selective group-III incorporation in InGaAs template assisted selective epitaxy
- Mattias Borg
- Lynne Gignac
- et al.
- 2018
- Nanotechnology
Dopant-Induced Modifications of Ga xIn(1- x)P Nanowire-Based p-n Junctions Monolithically Integrated on Si(111)
- Nicolas Bologna
- Stephan Wirths
- et al.
- 2018
- ACS AMI
Z2-FET as Capacitor-Less eDRAM Cell for High-Density Integration
- Carlos Navarro
- Meng Duan
- et al.
- 2017
- IEEE T-ED
An open-source platform to study uniaxial stress effects on nanoscale devices
- Giorgio Signorello
- M. Schraff
- et al.
- 2017
- Review of Scientific Instruments
Ballistic one-dimensional transport in InAs nanowires monolithically integrated on silicon
- Johannes Gooth
- Vanessa Schaller
- et al.
- 2017
- Applied Physics Letters
Nanoscale thermometry by scanning thermal microscopy
- F. Menges
- Heike Riel
- et al.
- 2016
- Review of Scientific Instruments
Thermal radiative near field transport between vanadium dioxide and silicon oxide across the metal insulator transition
- F. Menges
- M. Dittberner
- et al.
- 2016
- Applied Physics Letters
Analytic drain current model for III-V cylindrical nanowire transistors
- E.G. Marin
- F.G. Ruiz
- et al.
- 2015
- Journal of Applied Physics
Template-assisted selective epitaxy of III-V nanoscale devices for co-planar heterogeneous integration with Si
- Heinz Schmid
- Mattias Borg
- et al.
- 2015
- Applied Physics Letters