Evidence of electron and hole inversion in GaAs metal-oxide-semiconductor capacitors with HfO 2 gate dielectrics and α-Si/SiO 2 interlayers
- S.J. Koester
- E.W. Kiewra
- et al.
- 2006
- Applied Physics Letters
This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.