Origin of the threshold voltage instability in SiO2/HfO2 dual layer gate dielectrics
- A. Kerber
- E. Cartier
- et al.
- 2003
- IEEE Electron Device Letters
This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.