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40 results for Carol L. Stanis

Perimeter and plug effects in deep sub-micron polysilicon emitter bipolar transistors
- - Joachim N. Burghartz
  - Jack Y.-C. Sun
  - et al.
- 1990
- VLSI Technology 1990
The stability of Si₁-_xGe_x strained layers on small-area trench-isolated silicon
- - K. Schonenberg
  - Siu-Wai Chan
  - et al.
- 1997
- Journal of Materials Research
Spatially confined chemistry: Fabrication of Ge quantum dot arrays
- - J.R. Heath
  - R.S. Williams
  - et al.
- 1996
- Journal of Physical Chemistry
Electromigration drift velocity in Al-alloy and Cu-alloy lines
- - C.-K. Hu
  - K.Y. Lee
  - et al.
- 1996
- JES
Dopant interactions during the diffusion of arsenic and boron in opposite directions in polycrystalline/monocrystalline silicon structures
- - Joachim N. Burghartz
  - Carol L. Stanis
  - et al.
- 1995
- Applied Physics Letters
Roughness analysis of Si/SiGe heterostructures
- - R.M. Feenstra
  - M.A. Lutz
  - et al.
- 1995
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Fabrication of three-terminal resonant tunneling devices in silicon-based material
- - A. Zaslavsky
  - K.R. Milkove
  - et al.
- 1994
- Applied Physics Letters
A Low-Capacitance Bipolar/BiCMOS Isolation Technology, Part I—Concept, Fabrication Process, and Characterization
- - Joachim N. Burghartz
  - Robert C. McIntosh
  - et al.
- 1994
- IEEE Transactions on Electron Devices
Electromigration failure due to interfacial diffusion in fine Al alloy lines
- - C.-K. Hu
  - M.B. Small
  - et al.
- 1993
- Applied Physics Letters
Diffusion of elements implanted in amorphous titanium disilicide
- - F.M. d'Heurle
  - J.M. Cotte
  - et al.
- 1993
- Applied Surface Science