Conference paper
Full wafer technology for semiconductor lasers
P. Buchmann, M. Benedict, et al.
LEOS 1990
A GaAs Schottky-barrier f.e.t. (m.e.s.f.e.t.) with a 1 μm gate has been built, which is suitable for X band and Ku band applications. The unilateral power gain over the X band is above 9 dB and the noise figure is only 5 dB at 10 GHz. © 1972, The Institution of Electrical Engineers. All rights reserved.
P. Buchmann, M. Benedict, et al.
LEOS 1990
W. Baechtold
ISSCC 1972
J.P. Reithmaier, S. Hausser, et al.
Journal of Crystal Growth
Richard E. Harris, P. Wolf, et al.
IEEE Electron Device Letters