A. Paccagnella, A.C. Callegari, et al.
Journal of Applied Physics
The formation of WNx Schottky diodes on GaAs surfaces with various interface conditions was investigated by performing H2-and N2-plasma treatments on GaAs surfaces prior to the WNx film deposition. After annealing at 810°C for 10 min, an improvement in the diode rectifying characteristics was generally observed, resulting from the thermal recovery of the sputtering and plasma-induced damage. The maximum Фt-v = 0.76 eV was obtained for the H2-plasma-treated diodes. Samples with an N2-plasma-treated interface showed a reduced barrier height and a higher ideality factor with corresponding nonlinearity in the C-V curves due to the presence of a high density of inter-facial states. © 1989 IEEE
A. Paccagnella, A.C. Callegari, et al.
Journal of Applied Physics
Yanning Sun, S.J. Koester, et al.
CS MANTECH 2007
B. Cartier, M. Steen, et al.
VLSI Technology 2009
A.C. Callegari, P. Jamison, et al.
Journal of Applied Physics