Christophe R. Tretz, C.T. Chuang, et al.
IEEE International SOI Conference 1998
This paper describes a noncontact waveform measurement technique for the characterization of high-speed LSI and VLSI circuits using a Picosecond Photoelectron Scanning Electron Microscope with 5-ps temporal resolution, 0.1-μm spatial resolution, and a voltage resolution of 3 mV/√(Hz). The capability of the technique to measure and monitor the internal waveforms and to resolve the different contributions of the delay in the circuit without any loading effect is demonstrated by its application to the full characterization of sub-100-ps silicon bipolar ECL circuits. © 1988 IEEE
Christophe R. Tretz, C.T. Chuang, et al.
IEEE International SOI Conference 1998
Santanu Basu, Paul May, et al.
ASSL 1989
George Chiu, Jean-Marc Halbout, et al.
Microlithography 1987
Jean-Marc Halbout, Peter Vettiger, et al.
IEEE Electron Device Letters