PaperThermal velocity limits to diffusive electron transport in thin-base np+n GaAs bipolar transistorsE.S. Harmon, M.R. Melloch, et al.Applied Physics Letters
PaperArsenic precipitates in Al0.3Ga0.7As/GaAs multiple superlattice and quantum well structuresK. Mahalingam, N. Otsuka, et al.Applied Physics Letters
Conference paperOptoelectronic applications of GaAs epilayers containing arsenic precipitatesAlan C. Warren, J. Woodall, et al.IEE/LEOS Summer Topical Meetings 1991