Conference paper
First-principles calculations of diffusion constants in silicon
Peter E. Bloechl, C.G. Van de Walle, et al.
Symposium on Process Physics and Modeling in Semiconductor Technology 1990
Energy band calculations for SiO2 have not thus far been feasible due to the complexity of the unit cell. In this paper we report the results of a calculation using the empirical tight-binding method. The results are useful in interpreting observed spectra. © 1975.
Peter E. Bloechl, C.G. Van de Walle, et al.
Symposium on Process Physics and Modeling in Semiconductor Technology 1990
C.S. Nichols, C.G. Van De Walle, et al.
Physical Review Letters
J.H. Stathis, S.T. Pantelides
Physical Review B
M. Di Ventra, N.D. Lang, et al.
ICCN 2001